Category

Product Name

Applications

Description

InP Based LD/PD Epitaxial Wafer

● 18 WAVE 10G/25G DFB/FP EPI-WAFER

Wave:1270nm-1610nm

★CWDM
★PON
★5G Front-Haul
★LWDW

Typical Specifications（1310nm）
Grating Type: EBL/HG(Partial)

Threshold Current: ～8mA
Slope Efficiency: 0.4mW/mA
SMSR: >38dB

● 50G/100G EML EPI-WAFER(BH/RWG)

Wave:1310nm/1342nm/1577nm

★DATACOM
★GPON

Typical Specifications（1342nm EML）
Threshold Current:～20mA
SMSR: >38dB
3dB Bandwidth: 45GHz@45°C

● HIGH POWER CW DFB EPI-WAFER(BH/RWG) FOR SILICON PHOTONICS

Wave:1310nm/1550nm

★DATACOM

Typical Specifications

Grating Type: EBL/HG(Partial)

Threshold Current:～20mA
Peak Power: >100mW

● 10G/25G/50G/100G APD/PIN EPI-WAFER

★DATACOM
★PON
★WIRELESS

Typical Specifications

Responsibility: >0.9A/W
Dark Current: <0.1nA

Bandwidth: Meet Requirements

● PIN EPI-WAFER

★IAMAGING
★SENSING

Typical Specifications

Dark Current: <10fA